Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Chiao Chang; Hung Hsiang Cheng; Gary A. Sevison; Joshua R. Hendrickson; Zairui Li; Imad Agha; Jay Mathews; Richard A. Soref; Greg Sun

doi:10.3390/ma15030989

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Chiao Chang
, Hung Hsiang Cheng
, Gary A. Sevison
, Joshua R. Hendrickson
, Zairui Li
, Imad Agha
, Jay Mathews
, Richard A. Soref
, Greg Sun

Engineering

National Taiwan University
Air Force Research Laboratory
University of Dayton
University of Massachusetts Boston

Research output: Contribution to journal › Article › peer-review

Abstract

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

Original language	English
Article number	989
Journal	Materials
Volume	15
Issue number	3
DOIs	https://doi.org/10.3390/ma15030989
State	Published - Feb 1 2022

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics

Keywords

GeSn
Photo-response
Photodetector

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10.3390/ma15030989

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title = "Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density",

abstract = "We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.",

keywords = "GeSn, Photo-response, Photodetector",

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AU - Chang, Chiao

AU - Cheng, Hung Hsiang

AU - Sevison, Gary A.

AU - Hendrickson, Joshua R.

AU - Li, Zairui

AU - Agha, Imad

AU - Mathews, Jay

AU - Soref, Richard A.

AU - Sun, Greg

PY - 2022/2/1

Y1 - 2022/2/1

N2 - We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

AB - We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

KW - GeSn

KW - Photo-response

KW - Photodetector

UR - https://www.scopus.com/pages/publications/85123991955

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SN - 1996-1944

VL - 15

JO - Materials

JF - Materials

IS - 3

M1 - 989

ER -

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Abstract

ASJC Scopus Subject Areas

Keywords

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