Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes

Elaheh Ghanati; Gary Sevison; Chaio Chang; Hao Cheng Lin; Hung-Hsiang; Li Hui; Joshua Hendrickson; Richard Soref; Greg Sun; Jay Mathews

doi:10.1109/PHOSST.2018.8456718

Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes

Elaheh Ghanati
, Gary Sevison
, Chaio Chang
, Hao Cheng Lin
, Hung-Hsiang
, Li Hui
, Joshua Hendrickson
, Richard Soref
, Greg Sun
, Jay Mathews

Engineering

University of Dayton
Air Force Research Laboratory
National Taiwan University
University of Massachusetts Boston

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Responsivity of Ge/GeSn/Ge a heterostructure photodiode was measured and compared to a theoretical model. The responsivity of the device was found to decrease with increasing power from a pulsed laser, and the responsivity showed a peak at 1600 nm.

Original language	English
Title of host publication	IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	77-78
Number of pages	2
ISBN (Print)	9781538653432
DOIs	https://doi.org/10.1109/PHOSST.2018.8456718
State	Published - Sep 5 2018
Event	2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 - Waikoloa, United States Duration: Jul 9 2018 → Jul 11 2018

Publication series

Name	IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018

Conference

Conference	2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
Country/Territory	United States
City	Waikoloa
Period	7/9/18 → 7/11/18

ASJC Scopus Subject Areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Keywords

germanium
GeSn
photodetector
Responsivity
silicon photonics

Access to Document

10.1109/PHOSST.2018.8456718

Cite this

Ghanati, E., Sevison, G., Chang, C., Lin, H. C., Hung-Hsiang, Hui, L., Hendrickson, J., Soref, R., Sun, G., & Mathews, J. (2018). Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes. In IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 (pp. 77-78). Article 8456718 (IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2018.8456718

Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes. / Ghanati, Elaheh; Sevison, Gary; Chang, Chaio et al.
IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 77-78 8456718 (IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ghanati, E, Sevison, G, Chang, C, Lin, HC, Hung-Hsiang, Hui, L, Hendrickson, J, Soref, R, Sun, G & Mathews, J 2018, Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes. in IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018., 8456718, IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018, Institute of Electrical and Electronics Engineers Inc., pp. 77-78, 2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018, Waikoloa, United States, 7/9/18. https://doi.org/10.1109/PHOSST.2018.8456718

Ghanati E, Sevison G, Chang C, Lin HC, Hung-Hsiang, Hui L et al. Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes. In IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 77-78. 8456718. (IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018). doi: 10.1109/PHOSST.2018.8456718

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abstract = "Responsivity of Ge/GeSn/Ge a heterostructure photodiode was measured and compared to a theoretical model. The responsivity of the device was found to decrease with increasing power from a pulsed laser, and the responsivity showed a peak at 1600 nm.",

keywords = "germanium, GeSn, photodetector, Responsivity, silicon photonics",

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Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes

Abstract

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ASJC Scopus Subject Areas

Keywords

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