Abstract
Designs are given for parallel (rather than cascade) intersubband lasing in superlattice structures of group IV and III-V materials. Structures with population inversion due to coupled wells have minibandwidths too narrow for coherent transport and the incoherent interperiod rates are too small for population of a significant number of periods. A single-well period with local population inversion gives operation in the coherent regime. An example is given for the III-V materials. Both SiGe-Si and Si-ZnS are discussed for intersubband lasing at 1-20 μm.
| Original language | English |
|---|---|
| Pages (from-to) | 593-595 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1997 |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Keywords
- Coherent transport
- GaInAs-AlInAs
- Optoelectronics
- Semiconductor lasers
- Si-ZnS
- SiGe-Si
- Silicon
- Superlattices
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