Shortwave-infrared photoluminescence from Ge1-xSnx thin films on silicon

Seyed Amir Ghetmiri; Wei Du; Benjamin R. Conley; Aboozar Mosleh; Amjad Nazzal; Greg Sun; Richard A. Soref; Joe Margetis; John Tolle; Hameed A. Naseem; Shui Qing Yu

doi:10.1116/1.4897917

Shortwave-infrared photoluminescence from Ge_1-xSn_x thin films on silicon

Seyed Amir Ghetmiri
, Wei Du
, Benjamin R. Conley
, Aboozar Mosleh
, Amjad Nazzal
, Greg Sun
, Richard A. Soref
, Joe Margetis
, John Tolle
, Hameed A. Naseem
, Shui Qing Yu

Engineering

University of Arkansas System
Wilkes University
University of Massachusetts Boston
ASM

Research output: Contribution to journal › Article › peer-review

Abstract

Ge_1-xSn_x thin films with Sn composition up to 7% were epitaxially grown by chemical vapor deposition on silicon. Temperature-dependent photoluminescence was investigated and the peaks corresponding to the direct and indirect transitions were observed in a wavelength range from 1.6 to 2.2 μm. The exact peak positions obtained from Gaussian fitting were fitted with an empirical temperature dependent band-gap equation (Varshni relationship). The separation between direct and indirect peaks was equal to 0.012 eV for GeSn thin film with 7% Sn content at room temperature. This observation indicates that the indirect-to-direct crossover would take place at slightly higher Sn compositions.

Original language	English
Article number	060601
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	32
Issue number	6
DOIs	https://doi.org/10.1116/1.4897917
State	Published - Nov 1 2014

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4897917

Cite this

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title = "Shortwave-infrared photoluminescence from Ge1-xSnx thin films on silicon",

abstract = "Ge1-xSnx thin films with Sn composition up to 7\% were epitaxially grown by chemical vapor deposition on silicon. Temperature-dependent photoluminescence was investigated and the peaks corresponding to the direct and indirect transitions were observed in a wavelength range from 1.6 to 2.2 μm. The exact peak positions obtained from Gaussian fitting were fitted with an empirical temperature dependent band-gap equation (Varshni relationship). The separation between direct and indirect peaks was equal to 0.012 eV for GeSn thin film with 7\% Sn content at room temperature. This observation indicates that the indirect-to-direct crossover would take place at slightly higher Sn compositions.",

author = "Ghetmiri, \{Seyed Amir\} and Wei Du and Conley, \{Benjamin R.\} and Aboozar Mosleh and Amjad Nazzal and Greg Sun and Soref, \{Richard A.\} and Joe Margetis and John Tolle and Naseem, \{Hameed A.\} and Yu, \{Shui Qing\}",

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doi = "10.1116/1.4897917",

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TY - JOUR

T1 - Shortwave-infrared photoluminescence from Ge1-xSnx thin films on silicon

AU - Ghetmiri, Seyed Amir

AU - Du, Wei

AU - Conley, Benjamin R.

AU - Mosleh, Aboozar

AU - Nazzal, Amjad

AU - Sun, Greg

AU - Soref, Richard A.

AU - Margetis, Joe

AU - Tolle, John

AU - Naseem, Hameed A.

AU - Yu, Shui Qing

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Ge1-xSnx thin films with Sn composition up to 7% were epitaxially grown by chemical vapor deposition on silicon. Temperature-dependent photoluminescence was investigated and the peaks corresponding to the direct and indirect transitions were observed in a wavelength range from 1.6 to 2.2 μm. The exact peak positions obtained from Gaussian fitting were fitted with an empirical temperature dependent band-gap equation (Varshni relationship). The separation between direct and indirect peaks was equal to 0.012 eV for GeSn thin film with 7% Sn content at room temperature. This observation indicates that the indirect-to-direct crossover would take place at slightly higher Sn compositions.

AB - Ge1-xSnx thin films with Sn composition up to 7% were epitaxially grown by chemical vapor deposition on silicon. Temperature-dependent photoluminescence was investigated and the peaks corresponding to the direct and indirect transitions were observed in a wavelength range from 1.6 to 2.2 μm. The exact peak positions obtained from Gaussian fitting were fitted with an empirical temperature dependent band-gap equation (Varshni relationship). The separation between direct and indirect peaks was equal to 0.012 eV for GeSn thin film with 7% Sn content at room temperature. This observation indicates that the indirect-to-direct crossover would take place at slightly higher Sn compositions.

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JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 6

M1 - 060601

ER -

Shortwave-infrared photoluminescence from Ge_1-xSn_x thin films on silicon

Abstract

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