Si based GeSn light emitter: Mid-infrared devices in Si photonics

S. Q. Yu; S. A. Ghetmiri; W. Du; J. Margetis; Y. Zhou; A. Mosleh; S. Al-Kabi; A. Nazzal; G. Sun; R. A. Soref; J. Tolle; B. Li; H. A. Naseem

doi:10.1117/12.2077778

Si based GeSn light emitter: Mid-infrared devices in Si photonics

S. Q. Yu
, S. A. Ghetmiri
, W. Du
, J. Margetis
, Y. Zhou
, A. Mosleh
, S. Al-Kabi
, A. Nazzal
, G. Sun
, R. A. Soref
, J. Tolle
, B. Li
, H. A. Naseem

Engineering

University of Arkansas System
ASM
Wilkes University
University of Massachusetts Boston
Arktonics, LLC

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ge_1-xSn_x/Ge thin films and Ge/Ge_1-xSn_x/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm².

Original language	English
Title of host publication	Silicon Photonics X
Editors	Graham T. Reed, Michael R. Watts
Publisher	SPIE
ISBN (Electronic)	9781628414578
DOIs	https://doi.org/10.1117/12.2077778
State	Published - 2015
Event	Silicon Photonics X - San Francisco, United States Duration: Feb 9 2015 → Feb 12 2015

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9367
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Silicon Photonics X
Country/Territory	United States
City	San Francisco
Period	2/9/15 → 2/12/15

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

GeSn bandgap
Infrared
light emitting diodes

Access to Document

10.1117/12.2077778

Cite this

Yu, S. Q., Ghetmiri, S. A., Du, W., Margetis, J., Zhou, Y., Mosleh, A., Al-Kabi, S., Nazzal, A., Sun, G., Soref, R. A., Tolle, J., Li, B., & Naseem, H. A. (2015). Si based GeSn light emitter: Mid-infrared devices in Si photonics. In G. T. Reed, & M. R. Watts (Eds.), Silicon Photonics X Article 93670R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9367). SPIE. https://doi.org/10.1117/12.2077778

Yu, SQ, Ghetmiri, SA, Du, W, Margetis, J, Zhou, Y, Mosleh, A, Al-Kabi, S, Nazzal, A, Sun, G, Soref, RA, Tolle, J, Li, B & Naseem, HA 2015, Si based GeSn light emitter: Mid-infrared devices in Si photonics. in GT Reed & MR Watts (eds), Silicon Photonics X., 93670R, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9367, SPIE, Silicon Photonics X, San Francisco, United States, 2/9/15. https://doi.org/10.1117/12.2077778

@inproceedings{19b756e963e140dd8ec9bb8191a3f9a7,

title = "Si based GeSn light emitter: Mid-infrared devices in Si photonics",

abstract = "Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10\%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10\% Sn LED under the injection current density of 800 A/cm2.",

keywords = "GeSn bandgap, Infrared, light emitting diodes",

author = "Yu, \{S. Q.\} and Ghetmiri, \{S. A.\} and W. Du and J. Margetis and Y. Zhou and A. Mosleh and S. Al-Kabi and A. Nazzal and G. Sun and Soref, \{R. A.\} and J. Tolle and B. Li and Naseem, \{H. A.\}",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Silicon Photonics X ; Conference date: 09-02-2015 Through 12-02-2015",

year = "2015",

doi = "10.1117/12.2077778",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Reed, \{Graham T.\} and Watts, \{Michael R.\}",

booktitle = "Silicon Photonics X",

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TY - GEN

T1 - Si based GeSn light emitter

T2 - Silicon Photonics X

AU - Yu, S. Q.

AU - Ghetmiri, S. A.

AU - Du, W.

AU - Margetis, J.

AU - Zhou, Y.

AU - Mosleh, A.

AU - Al-Kabi, S.

AU - Nazzal, A.

AU - Sun, G.

AU - Soref, R. A.

AU - Tolle, J.

AU - Li, B.

AU - Naseem, H. A.

PY - 2015

Y1 - 2015

N2 - Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

AB - Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

KW - GeSn bandgap

KW - Infrared

KW - light emitting diodes

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UR - https://www.scopus.com/pages/publications/84928820893#tab=citedBy

U2 - 10.1117/12.2077778

DO - 10.1117/12.2077778

M3 - Conference contribution

AN - SCOPUS:84928820893

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Silicon Photonics X

A2 - Reed, Graham T.

A2 - Watts, Michael R.

PB - SPIE

Y2 - 9 February 2015 through 12 February 2015

ER -

Si based GeSn light emitter: Mid-infrared devices in Si photonics

Abstract

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Conference

ASJC Scopus Subject Areas

Keywords

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