Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

T. N. Pham; W. Du; B. R. Conley; J. Margetis; G. Sun; R. A. Soref; J. Tolle; B. Li; S. Q. Yu

doi:10.1049/el.2015.0331

Si-based Ge_0.9Sn_0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

T. N. Pham
, W. Du
, B. R. Conley
, J. Margetis
, G. Sun
, R. A. Soref
, J. Tolle
, B. Li
, S. Q. Yu

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	854-856
Number of pages	3
Journal	Electronics Letters
Volume	51
Issue number	11
DOIs	https://doi.org/10.1049/el.2015.0331
State	Published - May 28 2015

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

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10.1049/el.2015.0331

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@article{4deb5ea74e3e49b58b404a3d28d536dd,

title = "Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm",

author = "Pham, \{T. N.\} and W. Du and Conley, \{B. R.\} and J. Margetis and G. Sun and Soref, \{R. A.\} and J. Tolle and B. Li and Yu, \{S. Q.\}",

note = "Publisher Copyright: {\textcopyright} 2015 The Institution of Engineering and Technology.",

year = "2015",

month = may,

day = "28",

doi = "10.1049/el.2015.0331",

language = "English",

volume = "51",

pages = "854--856",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "11",

}

TY - JOUR

T1 - Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

AU - Pham, T. N.

AU - Du, W.

AU - Conley, B. R.

AU - Margetis, J.

AU - Sun, G.

AU - Soref, R. A.

AU - Tolle, J.

AU - Li, B.

AU - Yu, S. Q.

PY - 2015/5/28

Y1 - 2015/5/28

UR - https://www.scopus.com/pages/publications/84929649115

UR - https://www.scopus.com/pages/publications/84929649115#tab=citedBy

U2 - 10.1049/el.2015.0331

DO - 10.1049/el.2015.0331

M3 - Article

AN - SCOPUS:84929649115

SN - 0013-5194

VL - 51

SP - 854

EP - 856

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Si-based Ge_0.9Sn_0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

ASJC Scopus Subject Areas

Access to Document

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