Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K

Yiyin Zhou; Wei Dou; Wei Du; Solomon Ojo; Huong Tran; Seyed Ghetmiri; Jifeng Liu; Greg Sun; Richard Soref; Joe Margetis; John Tolle; Baohua Li; Zhong Chen; Mansour Mortazavi; Shui Qing Yu

doi:10.23919/CLEO.2019.8750512

Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K

Yiyin Zhou
, Wei Dou
, Wei Du
, Solomon Ojo
, Huong Tran
, Seyed Ghetmiri
, Jifeng Liu
, Greg Sun
, Richard Soref
, Joe Margetis
, John Tolle
, Baohua Li
, Zhong Chen
, Mansour Mortazavi
, Shui Qing Yu

Engineering

University of Arkansas System
Arktonics, LLC
Wilkes University
University of Arkansas at Pine Bluff
Dartmouth College
University of Massachusetts Boston
ASM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated optically pumped GeSn lasers with 20% maximum Sn content based on ridge waveguide with 5 and 20 μm ridge widths. The high operating temperature of 260 K was achieved with wider ridge device.

Original language	English
Title of host publication	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580576
DOIs	https://doi.org/10.23919/CLEO.2019.8750512
State	Published - May 2019
Event	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States Duration: May 5 2019 → May 10 2019

Publication series

Name	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Conference

Conference	2019 Conference on Lasers and Electro-Optics, CLEO 2019
Country/Territory	United States
City	San Jose
Period	5/5/19 → 5/10/19

ASJC Scopus Subject Areas

Spectroscopy
Industrial and Manufacturing Engineering
Safety, Risk, Reliability and Quality
Management, Monitoring, Policy and Law
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.23919/CLEO.2019.8750512

Cite this

Zhou, Y., Dou, W., Du, W., Ojo, S., Tran, H., Ghetmiri, S., Liu, J., Sun, G., Soref, R., Margetis, J., Tolle, J., Li, B., Chen, Z., Mortazavi, M., & Yu, S. Q. (2019). Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings Article 8750512 (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/CLEO.2019.8750512

Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K. / Zhou, Yiyin; Dou, Wei; Du, Wei et al.
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8750512 (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhou, Y, Dou, W, Du, W, Ojo, S, Tran, H, Ghetmiri, S, Liu, J, Sun, G, Soref, R, Margetis, J, Tolle, J, Li, B, Chen, Z, Mortazavi, M & Yu, SQ 2019, Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K. in 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings., 8750512, 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Conference on Lasers and Electro-Optics, CLEO 2019, San Jose, United States, 5/5/19. https://doi.org/10.23919/CLEO.2019.8750512

Zhou Y, Dou W, Du W, Ojo S, Tran H, Ghetmiri S et al. Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8750512. (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). doi: 10.23919/CLEO.2019.8750512

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title = "Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K",

abstract = "We demonstrated optically pumped GeSn lasers with 20\% maximum Sn content based on ridge waveguide with 5 and 20 μm ridge widths. The high operating temperature of 260 K was achieved with wider ridge device.",

author = "Yiyin Zhou and Wei Dou and Wei Du and Solomon Ojo and Huong Tran and Seyed Ghetmiri and Jifeng Liu and Greg Sun and Richard Soref and Joe Margetis and John Tolle and Baohua Li and Zhong Chen and Mansour Mortazavi and Yu, \{Shui Qing\}",

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doi = "10.23919/CLEO.2019.8750512",

language = "English",

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AU - Zhou, Yiyin

AU - Dou, Wei

AU - Du, Wei

AU - Ojo, Solomon

AU - Tran, Huong

AU - Ghetmiri, Seyed

AU - Liu, Jifeng

AU - Sun, Greg

AU - Soref, Richard

AU - Margetis, Joe

AU - Tolle, John

AU - Li, Baohua

AU - Chen, Zhong

AU - Mortazavi, Mansour

AU - Yu, Shui Qing

PY - 2019/5

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AB - We demonstrated optically pumped GeSn lasers with 20% maximum Sn content based on ridge waveguide with 5 and 20 μm ridge widths. The high operating temperature of 260 K was achieved with wider ridge device.

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M3 - Conference contribution

AN - SCOPUS:85069173932

T3 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

BT - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019

Y2 - 5 May 2019 through 10 May 2019

ER -

Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K

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