@inproceedings{48ade79552164796aed2199773d3b4d1,
title = "Si based mid-infrared GeSn photo detectors and light emitters",
abstract = "In this work, high performance GeSn photoconductor and light emitting diodes (LED) have been demonstrated. For the photoconductor, the high responsivity was achieved due to high photoconductive gain, which is attributed to the novel optical and electrical design. The longwave cutoff at 2.4 μm was also observed at room temperature. For LED, temperature-dependent study was conducted. The electroluminescence (EL) spectra at different temperatures were obtained and EL peak shift was observed. Moreover, the emission power at different temperatures was measured. High power emission at 2.1 μm was achieved.",
keywords = "GeSn, Infrared, Light emitting diode, Photoconductor",
author = "Wei Du and Thach Pham and Joe Margetis and Huong Tran and Ghetmiri, \{Seyed A.\} and Aboozar Mosleh and Greg Sun and Soref, \{Richard A.\} and John Tolle and Naseem, \{Hameed A.\} and Baohua Li and Yu, \{Shui Qing\}",
note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Optical Sensing, Imaging, and Photon Counting ; Conference date: 11-08-2015 Through 13-08-2015",
year = "2015",
doi = "10.1117/12.2187540",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Brown, \{Gail J.\} and Manijeh Razeghi and Temple, \{Dorota S.\}",
booktitle = "Optical Sensing, Imaging, and Photon Counting",
}