Si-based resonant tunneling diodes for room temperature operation

K. Y. Wu; I. S. Yu; K. Y. Wang; H. H. Cheng; K. M. Hung; G. Sun; R. A. Soref

doi:10.1109/INEC.2010.5424923

Si-based resonant tunneling diodes for room temperature operation

K. Y. Wu
, I. S. Yu
, K. Y. Wang
, H. H. Cheng
, K. M. Hung
, G. Sun
, R. A. Soref

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1252-1253
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424923
State	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	1/3/10 → 1/8/10

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424923

Cite this

Wu, K. Y., Yu, I. S., Wang, K. Y., Cheng, H. H., Hung, K. M., Sun, G., & Soref, R. A. (2010). Si-based resonant tunneling diodes for room temperature operation. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1252-1253). Article 5424923 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424923

Si-based resonant tunneling diodes for room temperature operation. / Wu, K. Y.; Yu, I. S.; Wang, K. Y. et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1252-1253 5424923 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, KY, Yu, IS, Wang, KY, Cheng, HH, Hung, KM, Sun, G & Soref, RA 2010, Si-based resonant tunneling diodes for room temperature operation. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424923, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1252-1253, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 1/3/10. https://doi.org/10.1109/INEC.2010.5424923

@inproceedings{f454b204ed814bceb61b4ffe64810a0e,

title = "Si-based resonant tunneling diodes for room temperature operation",

author = "Wu, \{K. Y.\} and Yu, \{I. S.\} and Wang, \{K. Y.\} and Cheng, \{H. H.\} and Hung, \{K. M.\} and G. Sun and Soref, \{R. A.\}",

year = "2010",

doi = "10.1109/INEC.2010.5424923",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1252--1253",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

TY - GEN

T1 - Si-based resonant tunneling diodes for room temperature operation

AU - Wu, K. Y.

AU - Yu, I. S.

AU - Wang, K. Y.

AU - Cheng, H. H.

AU - Hung, K. M.

AU - Sun, G.

AU - Soref, R. A.

PY - 2010

Y1 - 2010

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U2 - 10.1109/INEC.2010.5424923

DO - 10.1109/INEC.2010.5424923

M3 - Conference contribution

AN - SCOPUS:77951660583

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 1252

EP - 1253

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Si-based resonant tunneling diodes for room temperature operation

Publication series

Conference

ASJC Scopus Subject Areas

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