Abstract
The critical design issues for uni polar silicon quantum-well inter subband lasers are investigated in this paper. Group IV lasing at near-infrared and middle-infrared wavelengths is analyzed for surface-emitting and edge-emitting geometries. Calculations show feasibility of SiGe/Si and SiGeC/Si lasing. Silicon-on-insulator structures are proposed for indexguided lasers, vertical-cavity lasers and micro-cavity lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 427-439 |
| Number of pages | 13 |
| Journal | Superlattices and Microstructures |
| Volume | 23 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1998 |
ASJC Scopus Subject Areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering
Keywords
- Germanium
- Quantum wells
- Semiconductor lasers
- Silicon
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