Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas

J. R. Flemish; R. Pfeffer; W. Buchwald; K. A. Jones

Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas

J. R. Flemish
, R. Pfeffer
, W. Buchwald
, K. A. Jones

Engineering

Directorate

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Editors	Jerzy Kanicki, William L. Warren, Roderick A.B. Devine, Masakiyo Matsumura
Publisher	Publ by Materials Research Society
Pages	15-20
Number of pages	6
ISBN (Print)	1558991794
State	Published - 1993
Event	Proceedings of a Symposium on Amorphous Insulating Thin Films - Boston, MA, USA Duration: Dec 1 1992 → Dec 4 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	284
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of a Symposium on Amorphous Insulating Thin Films
City	Boston, MA, USA
Period	12/1/92 → 12/4/92

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Flemish, J. R., Pfeffer, R., Buchwald, W., & Jones, K. A. (1993). Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas. In J. Kanicki, W. L. Warren, R. A. B. Devine, & M. Matsumura (Eds.), Materials Research Society Symposium Proceedings (pp. 15-20). (Materials Research Society Symposium Proceedings; Vol. 284). Publ by Materials Research Society.

Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas. / Flemish, J. R.; Pfeffer, R.; Buchwald, W. et al.
Materials Research Society Symposium Proceedings. ed. / Jerzy Kanicki; William L. Warren; Roderick A.B. Devine; Masakiyo Matsumura. Publ by Materials Research Society, 1993. p. 15-20 (Materials Research Society Symposium Proceedings; Vol. 284).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Flemish, JR, Pfeffer, R, Buchwald, W & Jones, KA 1993, Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas. in J Kanicki, WL Warren, RAB Devine & M Matsumura (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 284, Publ by Materials Research Society, pp. 15-20, Proceedings of a Symposium on Amorphous Insulating Thin Films, Boston, MA, USA, 12/1/92.

Flemish, J. R. ; Pfeffer, R. ; Buchwald, W. et al. / Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas. Materials Research Society Symposium Proceedings. editor / Jerzy Kanicki ; William L. Warren ; Roderick A.B. Devine ; Masakiyo Matsumura. Publ by Materials Research Society, 1993. pp. 15-20 (Materials Research Society Symposium Proceedings).

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title = "Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas",

author = "Flemish, \{J. R.\} and R. Pfeffer and W. Buchwald and Jones, \{K. A.\}",

year = "1993",

language = "English",

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series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

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editor = "Jerzy Kanicki and Warren, \{William L.\} and Devine, \{Roderick A.B.\} and Masakiyo Matsumura",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of a Symposium on Amorphous Insulating Thin Films ; Conference date: 01-12-1992 Through 04-12-1992",

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AU - Flemish, J. R.

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AU - Buchwald, W.

AU - Jones, K. A.

PY - 1993

Y1 - 1993

UR - https://www.scopus.com/pages/publications/0027805750

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M3 - Conference contribution

AN - SCOPUS:0027805750

SN - 1558991794

T3 - Materials Research Society Symposium Proceedings

SP - 15

EP - 20

BT - Materials Research Society Symposium Proceedings

A2 - Kanicki, Jerzy

A2 - Warren, William L.

A2 - Devine, Roderick A.B.

A2 - Matsumura, Masakiyo

PB - Publ by Materials Research Society

T2 - Proceedings of a Symposium on Amorphous Insulating Thin Films

Y2 - 1 December 1992 through 4 December 1992

ER -

Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas

Publication series

Conference

ASJC Scopus Subject Areas

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