TY - GEN
T1 - Silicon nitride deposited at very low silane pressures using electron cyclotron resonance plasmas
AU - Flemish, J. R.
AU - Pfeffer, R.
AU - Buchwald, W.
AU - Jones, K. A.
PY - 1993
Y1 - 1993
N2 - We report on the material properties of SiNX:H films deposited using a 2% SiH4/N2 mixture with additional N2 in an ECR reactor. Deposition rates, refractive index, and stoichiometry have been characterized using ellipsometry, Rutherford backscattering spectroscopy, and infrared spectroscopy. Reactor conditions of 2 m Torr total pressure, 650W microwave power, and substrate temperature of 250°C result in high quality, stoichiometric silicon nitride. With a SiH4/N2 ratio =0.003, hydrogen incorporation is approximately 1.5% and the refractive index is nr=2.0. Lower microwave power and a higher SiH4/N2 ratio result in slightly N-rich films which is attributable to increased H-incorporation. Higher total pressure results in significantly enhanced deposition rates, but with greatly increased H and O content.
AB - We report on the material properties of SiNX:H films deposited using a 2% SiH4/N2 mixture with additional N2 in an ECR reactor. Deposition rates, refractive index, and stoichiometry have been characterized using ellipsometry, Rutherford backscattering spectroscopy, and infrared spectroscopy. Reactor conditions of 2 m Torr total pressure, 650W microwave power, and substrate temperature of 250°C result in high quality, stoichiometric silicon nitride. With a SiH4/N2 ratio =0.003, hydrogen incorporation is approximately 1.5% and the refractive index is nr=2.0. Lower microwave power and a higher SiH4/N2 ratio result in slightly N-rich films which is attributable to increased H-incorporation. Higher total pressure results in significantly enhanced deposition rates, but with greatly increased H and O content.
UR - https://www.scopus.com/pages/publications/0027805750
UR - https://www.scopus.com/pages/publications/0027805750#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:0027805750
SN - 1558991794
T3 - Materials Research Society Symposium Proceedings
SP - 15
EP - 20
BT - Materials Research Society Symposium Proceedings
A2 - Kanicki, Jerzy
A2 - Warren, William L.
A2 - Devine, Roderick A.B.
A2 - Matsumura, Masakiyo
PB - Publ by Materials Research Society
T2 - Proceedings of a Symposium on Amorphous Insulating Thin Films
Y2 - 1 December 1992 through 4 December 1992
ER -