@article{c7c3e435ea4848c68af59629f0894140,
title = "Sn-based group-IV structure for resonant tunneling diodes",
keywords = "peak current density, peak-to-valley ratio, Si-based resonant tunneling diodes (RTDs), SiGeSn alloys, strain-free QW, strained QW",
author = "Wu, \{Kun Yuan\} and Tsai, \{Bing Hung\} and Chen, \{Jia Zhi\} and Chang, \{Guo En\} and Mashanov, \{Vladimir I.\} and Cheng, \{Henry H.\} and Greg Sun and Soref, \{Richard A.\}",
year = "2013",
doi = "10.1109/LED.2013.2266540",
language = "English",
volume = "34",
pages = "951--953",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}