Sn-based group-IV structure for resonant tunneling diodes

Kun Yuan Wu; Bing Hung Tsai; Jia Zhi Chen; Guo En Chang; Vladimir I. Mashanov; Henry H. Cheng; Greg Sun; Richard A. Soref

doi:10.1109/LED.2013.2266540

Sn-based group-IV structure for resonant tunneling diodes

Kun Yuan Wu
, Bing Hung Tsai
, Jia Zhi Chen
, Guo En Chang
, Vladimir I. Mashanov
, Henry H. Cheng
, Greg Sun
, Richard A. Soref

Engineering

National Taiwan University
National Chung Cheng University
RAS - Institute of Semiconductor Physics, Siberian Branch
University of Massachusetts Boston

Research output: Contribution to journal › Article › peer-review

Abstract

We report a theoretical investigation on the electrical properties of a Sn-based group-IV structure for a resonant tunneling diode (RTD). The analysis on the composition-dependent strain, energy profile, and current-voltage characteristic of a double-barrier heterostructure shows that the peak current density and peak-to-valley ratio are enhanced with a moderated tensile strain in the barrier layer, providing an alternative approach for group-IV RTDs.

Original language	English
Article number	6553587
Pages (from-to)	951-953
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/LED.2013.2266540
State	Published - 2013

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

peak current density
peak-to-valley ratio
Si-based resonant tunneling diodes (RTDs)
SiGeSn alloys
strain-free QW
strained QW

Access to Document

10.1109/LED.2013.2266540

Cite this

@article{c7c3e435ea4848c68af59629f0894140,

title = "Sn-based group-IV structure for resonant tunneling diodes",

abstract = "We report a theoretical investigation on the electrical properties of a Sn-based group-IV structure for a resonant tunneling diode (RTD). The analysis on the composition-dependent strain, energy profile, and current-voltage characteristic of a double-barrier heterostructure shows that the peak current density and peak-to-valley ratio are enhanced with a moderated tensile strain in the barrier layer, providing an alternative approach for group-IV RTDs.",

keywords = "peak current density, peak-to-valley ratio, Si-based resonant tunneling diodes (RTDs), SiGeSn alloys, strain-free QW, strained QW",

author = "Wu, \{Kun Yuan\} and Tsai, \{Bing Hung\} and Chen, \{Jia Zhi\} and Chang, \{Guo En\} and Mashanov, \{Vladimir I.\} and Cheng, \{Henry H.\} and Greg Sun and Soref, \{Richard A.\}",

year = "2013",

doi = "10.1109/LED.2013.2266540",

language = "English",

volume = "34",

pages = "951--953",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Sn-based group-IV structure for resonant tunneling diodes

AU - Wu, Kun Yuan

AU - Tsai, Bing Hung

AU - Chen, Jia Zhi

AU - Chang, Guo En

AU - Mashanov, Vladimir I.

AU - Cheng, Henry H.

AU - Sun, Greg

AU - Soref, Richard A.

PY - 2013

Y1 - 2013

N2 - We report a theoretical investigation on the electrical properties of a Sn-based group-IV structure for a resonant tunneling diode (RTD). The analysis on the composition-dependent strain, energy profile, and current-voltage characteristic of a double-barrier heterostructure shows that the peak current density and peak-to-valley ratio are enhanced with a moderated tensile strain in the barrier layer, providing an alternative approach for group-IV RTDs.

AB - We report a theoretical investigation on the electrical properties of a Sn-based group-IV structure for a resonant tunneling diode (RTD). The analysis on the composition-dependent strain, energy profile, and current-voltage characteristic of a double-barrier heterostructure shows that the peak current density and peak-to-valley ratio are enhanced with a moderated tensile strain in the barrier layer, providing an alternative approach for group-IV RTDs.

KW - peak current density

KW - peak-to-valley ratio

KW - Si-based resonant tunneling diodes (RTDs)

KW - SiGeSn alloys

KW - strain-free QW

KW - strained QW

UR - https://www.scopus.com/pages/publications/84881023648

UR - https://www.scopus.com/pages/publications/84881023648#tab=citedBy

U2 - 10.1109/LED.2013.2266540

DO - 10.1109/LED.2013.2266540

M3 - Article

AN - SCOPUS:84881023648

SN - 0741-3106

VL - 34

SP - 951

EP - 953

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 6553587

ER -

Sn-based group-IV structure for resonant tunneling diodes

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this