Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Seyed Amir Ghetmiri; Yiyin Zhou; Joe Margetis; Sattar Al-Kabi; Wei Dou; Aboozar Mosleh; Wei Du; Andrian Kuchuk; Jifeng Liu; Greg Sun; Richard A. Soref; John Tolle; Hameed A. Naseem; Baohua Li; Mansour Mortazavi; Shui Qing Yu

doi:10.1364/OL.42.000387

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Seyed Amir Ghetmiri
, Yiyin Zhou
, Joe Margetis
, Sattar Al-Kabi
, Wei Dou
, Aboozar Mosleh
, Wei Du
, Andrian Kuchuk
, Jifeng Liu
, Greg Sun
, Richard A. Soref
, John Tolle
, Hameed A. Naseem
, Baohua Li
, Mansour Mortazavi
, Shui Qing Yu

Engineering

University of Arkansas System
ASM
Arkansas Technical University
University of Arkansas at Pine Bluff
Dartmouth College
University of Massachusetts Boston
Arktonics, LLC

Research output: Contribution to journal › Article › peer-review

Abstract

A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

Original language	English
Pages (from-to)	387-390
Number of pages	4
Journal	Optics Letters
Volume	42
Issue number	3
DOIs	https://doi.org/10.1364/OL.42.000387
State	Published - Feb 1 2017

ASJC Scopus Subject Areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.42.000387

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Ghetmiri, S. A., Zhou, Y., Margetis, J., Al-Kabi, S., Dou, W., Mosleh, A., Du, W., Kuchuk, A., Liu, J., Sun, G., Soref, R. A., Tolle, J., Naseem, H. A., Li, B., Mortazavi, M., & Yu, S. Q. (2017). Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics. Optics Letters, 42(3), 387-390. https://doi.org/10.1364/OL.42.000387

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title = "Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics",

abstract = "A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.",

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doi = "10.1364/OL.42.000387",

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T1 - Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

AU - Ghetmiri, Seyed Amir

AU - Zhou, Yiyin

AU - Margetis, Joe

AU - Al-Kabi, Sattar

AU - Dou, Wei

AU - Mosleh, Aboozar

AU - Du, Wei

AU - Kuchuk, Andrian

AU - Liu, Jifeng

AU - Sun, Greg

AU - Soref, Richard A.

AU - Tolle, John

AU - Naseem, Hameed A.

AU - Li, Baohua

AU - Mortazavi, Mansour

AU - Yu, Shui Qing

PY - 2017/2/1

Y1 - 2017/2/1

N2 - A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

AB - A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

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AN - SCOPUS:85011681271

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JO - Optics Letters

JF - Optics Letters

IS - 3

ER -

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

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ASJC Scopus Subject Areas

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