Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement

  • Perry C. Grant
  • , Joe Margetis
  • , Wei Du
  • , Yiyin Zhou
  • , Wei Dou
  • , Grey Abernathy
  • , Andrian Kuchuk
  • , Baohua Li
  • , John Tolle
  • , Jifeng Liu
  • , Greg Sun
  • , Richard A. Soref
  • , Mansour Mortazavi
  • , Shui Qing Yu

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number465201
JournalNanotechnology
Volume29
Issue number46
DOIs
StatePublished - Sep 20 2018

ASJC Scopus Subject Areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Keywords

  • CVD growth
  • GeSn quantum well
  • type-I band alignment

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