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Study of high performance GeSn photodetectors with cutoff wavelength up to 3.7 µm for low-cost infrared imaging

  • Huong Tran
  • , Thach Pham
  • , Joe Margetis
  • , Yiyin Zhou
  • , Wei Dou
  • , Perry C. Grant
  • , Joshua M. Grant
  • , Sattar Alkabi
  • , Wei Du
  • , Greg Sun
  • , Richard A. Soref
  • , John Tolle
  • , Baohua Li
  • , Mansour Mortazavi
  • , Shui Qing Yu
  • University of Arkansas System
  • LLC
  • ASM
  • Wilkes University
  • University of Massachusetts Boston
  • University of Arkansas at Pine Bluff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The GeSn photodetectors with Sn compositions up to 22.3% were systematically investigated. The maximum cutoff wavelength of 3.7 μm at 300 K and the peak specific detectivity of 9.5×109 cm∙Hz1/2W-1 at 77 K were achieved with 22.3% and 11.4% Sn devices, respectively. Moreover, the infrared images were captured using Ge0.89Sn0.11 photoconductor at 77 K.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2019
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580576
DOIs
StatePublished - 2019
EventCLEO: Science and Innovations, CLEO_SI 2019 - San Jose, United States
Duration: May 5 2019May 10 2019

Publication series

NameOptics InfoBase Conference Papers
VolumePart F129-CLEO_SI 2019
ISSN (Electronic)2162-2701

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2019
Country/TerritoryUnited States
CitySan Jose
Period5/5/195/10/19

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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