Switching characteristics of a high-temperature 6H-SiC thyristor

  • K. Xie
  • , W. R. Buchwald
  • , J. H. Zhao
  • , J. R. Flemish
  • , T. Burke
  • , L. Kingsley
  • , M. Weiner
  • , H. Singh

Research output: Contribution to journalConference articlepeer-review

Original languageEnglish
Pages (from-to)415-418
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 11 1994Dec 14 1994

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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