Systematic study of Si-based Ge0.9Sn0.1 light-emitting diodes towards mid-infrared application

Yiyin Zhou; Wei Du; Wei Dou; Thach Pham; Aboozar Mosleh; Seyed Amir Ghetmiri; Sattar Al-Kabi; Joe Margetis; John Tolle; Greg Sun; Richard Soref; Baohua Li; Mansour Mortazavi; Hameed Naseem; Shui Qing Yu

doi:10.1364/cleo_at.2016.jw2a.127

Systematic study of Si-based Ge_0.9Sn_0.1 light-emitting diodes towards mid-infrared application

Yiyin Zhou
, Wei Du
, Wei Dou
, Thach Pham
, Aboozar Mosleh
, Seyed Amir Ghetmiri
, Sattar Al-Kabi
, Joe Margetis
, John Tolle
, Greg Sun
, Richard Soref
, Baohua Li
, Mansour Mortazavi
, Hameed Naseem
, Shui Qing Yu

Engineering

University of Arkansas System
University of Arkansas at Pine Bluff
Wasit University
3440 East University Drive
University of Massachusetts Boston
LLC

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Characterizations of Ge/Ge_0.9Sn_0.1/Ge double heterostructure light-emitting diodes have been performed at the temperatures from 300 to 77K. The electroluminescence emission from the direct bandgap transition has been observed and systematically investigated.

Original language	English
Title of host publication	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580118
DOIs	https://doi.org/10.1364/cleo_at.2016.jw2a.127
State	Published - Dec 16 2016
Event	2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States Duration: Jun 5 2016 → Jun 10 2016

Publication series

Name	2016 Conference on Lasers and Electro-Optics, CLEO 2016

Conference

Conference	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Country/Territory	United States
City	San Jose
Period	6/5/16 → 6/10/16

ASJC Scopus Subject Areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1364/cleo_at.2016.jw2a.127

Cite this

Zhou, Y., Du, W., Dou, W., Pham, T., Mosleh, A., Ghetmiri, S. A., Al-Kabi, S., Margetis, J., Tolle, J., Sun, G., Soref, R., Li, B., Mortazavi, M., Naseem, H., & Yu, S. Q. (2016). Systematic study of Si-based Ge_0.9Sn_0.1 light-emitting diodes towards mid-infrared application. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 Article 7788306 (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/cleo_at.2016.jw2a.127

Systematic study of Si-based Ge_0.9Sn_0.1 light-emitting diodes towards mid-infrared application. / Zhou, Yiyin; Du, Wei; Dou, Wei et al.
2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7788306 (2016 Conference on Lasers and Electro-Optics, CLEO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhou, Y, Du, W, Dou, W, Pham, T, Mosleh, A, Ghetmiri, SA, Al-Kabi, S, Margetis, J, Tolle, J, Sun, G, Soref, R, Li, B, Mortazavi, M, Naseem, H & Yu, SQ 2016, Systematic study of Si-based Ge_0.9Sn_0.1 light-emitting diodes towards mid-infrared application. in 2016 Conference on Lasers and Electro-Optics, CLEO 2016., 7788306, 2016 Conference on Lasers and Electro-Optics, CLEO 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Conference on Lasers and Electro-Optics, CLEO 2016, San Jose, United States, 6/5/16. https://doi.org/10.1364/cleo_at.2016.jw2a.127

Zhou Y, Du W, Dou W, Pham T, Mosleh A, Ghetmiri SA et al. Systematic study of Si-based Ge_0.9Sn_0.1 light-emitting diodes towards mid-infrared application. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7788306. (2016 Conference on Lasers and Electro-Optics, CLEO 2016). doi: 10.1364/cleo_at.2016.jw2a.127

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abstract = "Characterizations of Ge/Ge0.9Sn0.1/Ge double heterostructure light-emitting diodes have been performed at the temperatures from 300 to 77K. The electroluminescence emission from the direct bandgap transition has been observed and systematically investigated.",

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