Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures

M. V. Dolguikh; A. V. Muravjov; R. E. Peale; D. Bliss; C. Lynch; D. W. Weyburne; W. R. Buchwald

doi:10.1117/12.664981

Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures

M. V. Dolguikh
, A. V. Muravjov
, R. E. Peale
, D. Bliss
, C. Lynch
, D. W. Weyburne
, W. R. Buchwald

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Terahertz for Military and Security Applications IV
DOIs	https://doi.org/10.1117/12.664981
State	Published - 2006
Event	Terahertz for Military and Security Applications IV - Kissimmee, FL, United States Duration: Apr 17 2006 → Apr 18 2006

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6212
ISSN (Print)	0277-786X

Conference

Conference	Terahertz for Military and Security Applications IV
Country/Territory	United States
City	Kissimmee, FL
Period	4/17/06 → 4/18/06

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Epitaxy
Far infrared
Gallium arsenide
Germanium
Laser
Silicon
Terahertz

Access to Document

10.1117/12.664981

Cite this

Dolguikh, M. V., Muravjov, A. V., Peale, R. E., Bliss, D., Lynch, C., Weyburne, D. W., & Buchwald, W. R. (2006). Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures. In Terahertz for Military and Security Applications IV Article 621206 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6212). https://doi.org/10.1117/12.664981

Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures. / Dolguikh, M. V.; Muravjov, A. V.; Peale, R. E. et al.
Terahertz for Military and Security Applications IV. 2006. 621206 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6212).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dolguikh, MV, Muravjov, AV, Peale, RE, Bliss, D, Lynch, C, Weyburne, DW & Buchwald, WR 2006, Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures. in Terahertz for Military and Security Applications IV., 621206, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6212, Terahertz for Military and Security Applications IV, Kissimmee, FL, United States, 4/17/06. https://doi.org/10.1117/12.664981

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title = "Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures",

keywords = "Epitaxy, Far infrared, Gallium arsenide, Germanium, Laser, Silicon, Terahertz",

author = "Dolguikh, \{M. V.\} and Muravjov, \{A. V.\} and Peale, \{R. E.\} and D. Bliss and C. Lynch and Weyburne, \{D. W.\} and Buchwald, \{W. R.\}",

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language = "English",

isbn = "0819462683",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Dolguikh, M. V.

AU - Muravjov, A. V.

AU - Peale, R. E.

AU - Bliss, D.

AU - Lynch, C.

AU - Weyburne, D. W.

AU - Buchwald, W. R.

PY - 2006

Y1 - 2006

KW - Epitaxy

KW - Far infrared

KW - Gallium arsenide

KW - Germanium

KW - Laser

KW - Silicon

KW - Terahertz

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UR - https://www.scopus.com/pages/publications/33747632735#tab=citedBy

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DO - 10.1117/12.664981

M3 - Conference contribution

AN - SCOPUS:33747632735

SN - 0819462683

SN - 9780819462688

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Terahertz for Military and Security Applications IV

T2 - Terahertz for Military and Security Applications IV

Y2 - 17 April 2006 through 18 April 2006

ER -

Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

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