The SiGeSn approach towards Si-based lasers

Greg Sun

doi:10.1109/ISTDM.2012.6222487

The SiGeSn approach towards Si-based lasers

Greg Sun

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Si-based lasers have long been sought because they serve as light sources for monolithic integration of Si electronics with photonic components on the same Si or silicon-on-insulator (SOI). Unfortunately, Si has not been a material of choice for luminescence applications owing to its indirect bandgap. The material system composed of group-IV elements (Si, Ge, Sn) and their alloys is an excellent new technology that holds the promise to achieve the Si-based lasers. This talk presents design and simulation results on Si-based lasers with either band-to-band or intersubband approach within the group-IV system.

Original language	English
Title of host publication	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages	120-121
Number of pages	2
DOIs	https://doi.org/10.1109/ISTDM.2012.6222487
State	Published - 2012
Event	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States Duration: Jun 4 2012 → Jun 6 2012

Publication series

Name	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Conference

Conference	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Country/Territory	United States
City	Berkeley, CA
Period	6/4/12 → 6/6/12

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2012.6222487

Cite this

Sun, G 2012, The SiGeSn approach towards Si-based lasers. in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222487, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, pp. 120-121, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 6/4/12. https://doi.org/10.1109/ISTDM.2012.6222487

@inproceedings{caaacfad6228455eaf81aeac49d0595e,

title = "The SiGeSn approach towards Si-based lasers",

abstract = "Si-based lasers have long been sought because they serve as light sources for monolithic integration of Si electronics with photonic components on the same Si or silicon-on-insulator (SOI). Unfortunately, Si has not been a material of choice for luminescence applications owing to its indirect bandgap. The material system composed of group-IV elements (Si, Ge, Sn) and their alloys is an excellent new technology that holds the promise to achieve the Si-based lasers. This talk presents design and simulation results on Si-based lasers with either band-to-band or intersubband approach within the group-IV system.",

author = "Greg Sun",

year = "2012",

doi = "10.1109/ISTDM.2012.6222487",

language = "English",

isbn = "9781457718625",

series = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

pages = "120--121",

booktitle = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

note = "6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 ; Conference date: 04-06-2012 Through 06-06-2012",

}

TY - GEN

T1 - The SiGeSn approach towards Si-based lasers

AU - Sun, Greg

PY - 2012

Y1 - 2012

N2 - Si-based lasers have long been sought because they serve as light sources for monolithic integration of Si electronics with photonic components on the same Si or silicon-on-insulator (SOI). Unfortunately, Si has not been a material of choice for luminescence applications owing to its indirect bandgap. The material system composed of group-IV elements (Si, Ge, Sn) and their alloys is an excellent new technology that holds the promise to achieve the Si-based lasers. This talk presents design and simulation results on Si-based lasers with either band-to-band or intersubband approach within the group-IV system.

AB - Si-based lasers have long been sought because they serve as light sources for monolithic integration of Si electronics with photonic components on the same Si or silicon-on-insulator (SOI). Unfortunately, Si has not been a material of choice for luminescence applications owing to its indirect bandgap. The material system composed of group-IV elements (Si, Ge, Sn) and their alloys is an excellent new technology that holds the promise to achieve the Si-based lasers. This talk presents design and simulation results on Si-based lasers with either band-to-band or intersubband approach within the group-IV system.

UR - https://www.scopus.com/pages/publications/84864242043

UR - https://www.scopus.com/pages/publications/84864242043#tab=citedBy

U2 - 10.1109/ISTDM.2012.6222487

DO - 10.1109/ISTDM.2012.6222487

M3 - Conference contribution

AN - SCOPUS:84864242043

SN - 9781457718625

T3 - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

SP - 120

EP - 121

BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

T2 - 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012

Y2 - 4 June 2012 through 6 June 2012

ER -

The SiGeSn approach towards Si-based lasers

Abstract

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this