The strain dependence of Ge1 - xsnx (x = 0.083) Raman shift

Chiao Chang; Hui Li; Tsung Pin Chen; Wei Kai Tseng; Henry Cheng; Chung Ting Ko; Chung Yen Hsieh; Miin Jang Chen; Greg Sun

doi:10.1016/j.tsf.2015.09.040

The strain dependence of Ge_{1 - x}sn_x (x = 0.083) Raman shift

Chiao Chang
, Hui Li
, Tsung Pin Chen
, Wei Kai Tseng
, Henry Cheng
, Chung Ting Ko
, Chung Yen Hsieh
, Miin Jang Chen
, Greg Sun

Engineering

National Taiwan University

Research output: Contribution to journal › Article › peer-review

Abstract

We report an investigation of strain-dependent Raman frequency shift in Ge_0.917Sn_0.083 epilayer where the Sn composition is near the indirect-to-direct band gap transition point. The strain is modulated by ex-situ rapid thermal annealing and the amount of strain relaxation is determined by X-ray diffraction measurement. The results show that the Raman shift of Ge-Ge longitudinal optical phonon is linearly dependent on the in-plane strain of the GeSn layers with a coefficient b = - 299.3 cm^{- 1}. Such a relationship enables characterization of GeSn epilayers using the readily accessible Raman spectroscopy.

Original language	English
Pages (from-to)	40-43
Number of pages	4
Journal	Thin Solid Films
Volume	593
DOIs	https://doi.org/10.1016/j.tsf.2015.09.040
State	Published - Oct 30 2015

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Germanium-tin
Molecular beam epitaxy
Raman spectroscopy
Strain
Transmission electron microscopy
X-ray diffraction

Access to Document

10.1016/j.tsf.2015.09.040

Cite this

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title = "The strain dependence of Ge1 - xsnx (x = 0.083) Raman shift",

abstract = "We report an investigation of strain-dependent Raman frequency shift in Ge0.917Sn0.083 epilayer where the Sn composition is near the indirect-to-direct band gap transition point. The strain is modulated by ex-situ rapid thermal annealing and the amount of strain relaxation is determined by X-ray diffraction measurement. The results show that the Raman shift of Ge-Ge longitudinal optical phonon is linearly dependent on the in-plane strain of the GeSn layers with a coefficient b = - 299.3 cm- 1. Such a relationship enables characterization of GeSn epilayers using the readily accessible Raman spectroscopy.",

keywords = "Germanium-tin, Molecular beam epitaxy, Raman spectroscopy, Strain, Transmission electron microscopy, X-ray diffraction",

author = "Chiao Chang and Hui Li and Chen, \{Tsung Pin\} and Tseng, \{Wei Kai\} and Henry Cheng and Ko, \{Chung Ting\} and Hsieh, \{Chung Yen\} and Chen, \{Miin Jang\} and Greg Sun",

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year = "2015",

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day = "30",

doi = "10.1016/j.tsf.2015.09.040",

language = "English",

volume = "593",

pages = "40--43",

journal = "Thin Solid Films",

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TY - JOUR

T1 - The strain dependence of Ge1 - xsnx (x = 0.083) Raman shift

AU - Chang, Chiao

AU - Li, Hui

AU - Chen, Tsung Pin

AU - Tseng, Wei Kai

AU - Cheng, Henry

AU - Ko, Chung Ting

AU - Hsieh, Chung Yen

AU - Chen, Miin Jang

AU - Sun, Greg

PY - 2015/10/30

Y1 - 2015/10/30

N2 - We report an investigation of strain-dependent Raman frequency shift in Ge0.917Sn0.083 epilayer where the Sn composition is near the indirect-to-direct band gap transition point. The strain is modulated by ex-situ rapid thermal annealing and the amount of strain relaxation is determined by X-ray diffraction measurement. The results show that the Raman shift of Ge-Ge longitudinal optical phonon is linearly dependent on the in-plane strain of the GeSn layers with a coefficient b = - 299.3 cm- 1. Such a relationship enables characterization of GeSn epilayers using the readily accessible Raman spectroscopy.

AB - We report an investigation of strain-dependent Raman frequency shift in Ge0.917Sn0.083 epilayer where the Sn composition is near the indirect-to-direct band gap transition point. The strain is modulated by ex-situ rapid thermal annealing and the amount of strain relaxation is determined by X-ray diffraction measurement. The results show that the Raman shift of Ge-Ge longitudinal optical phonon is linearly dependent on the in-plane strain of the GeSn layers with a coefficient b = - 299.3 cm- 1. Such a relationship enables characterization of GeSn epilayers using the readily accessible Raman spectroscopy.

KW - Germanium-tin

KW - Molecular beam epitaxy

KW - Raman spectroscopy

KW - Strain

KW - Transmission electron microscopy

KW - X-ray diffraction

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DO - 10.1016/j.tsf.2015.09.040

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