Theoretical analysis of n-type si-based resonant tunneling diodes deposited on either partially or fully relaxed sige buffer layers

Kuan Y. Wu; Hung H. Cheng; Kuan M. Hung; Greg Sun

doi:10.1109/TED.2013.2246166

Theoretical analysis of n-type si-based resonant tunneling diodes deposited on either partially or fully relaxed sige buffer layers

Kuan Y. Wu
, Hung H. Cheng
, Kuan M. Hung
, Greg Sun

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	6466378
Pages (from-to)	1298-1301
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	4
DOIs	https://doi.org/10.1109/TED.2013.2246166
State	Published - 2013

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Peak-to-valley ratio (PVRs)
silicon germanium (SiGe)
tunneling

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10.1109/TED.2013.2246166

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title = "Theoretical analysis of n-type si-based resonant tunneling diodes deposited on either partially or fully relaxed sige buffer layers",

keywords = "Peak-to-valley ratio (PVRs), silicon germanium (SiGe), tunneling",

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year = "2013",

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language = "English",

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pages = "1298--1301",

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T1 - Theoretical analysis of n-type si-based resonant tunneling diodes deposited on either partially or fully relaxed sige buffer layers

AU - Wu, Kuan Y.

AU - Cheng, Hung H.

AU - Hung, Kuan M.

AU - Sun, Greg

PY - 2013

Y1 - 2013

KW - Peak-to-valley ratio (PVRs)

KW - silicon germanium (SiGe)

KW - tunneling

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UR - https://www.scopus.com/pages/publications/84875500082#tab=citedBy

U2 - 10.1109/TED.2013.2246166

DO - 10.1109/TED.2013.2246166

M3 - Article

AN - SCOPUS:84875500082

SN - 0018-9383

VL - 60

SP - 1298

EP - 1301

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 6466378

ER -

Theoretical analysis of n-type si-based resonant tunneling diodes deposited on either partially or fully relaxed sige buffer layers

ASJC Scopus Subject Areas

Keywords

Access to Document

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