Abstract
A new tunable source of infrared radiation based on intersubband electron Raman scattering in semiconductor quantum wells is studied theoretically. The structure consisting of three levels in two coupled GaAs/AlGaAs quantum wells is optimized for a maximum Raman gain at zero bias. Raman gain as large as 400/cm can be achieved according to our calculations. Lasing wavelengths are tuned when an external dc bias field is applied along the growth direction. An infrared tuning range of 8-12 μm with moderate Raman gain is predicted as the electric field is varied from -40 to 40 kV/cm.
| Original language | English |
|---|---|
| Pages (from-to) | 648-651 |
| Number of pages | 4 |
| Journal | Journal of the Optical Society of America B: Optical Physics |
| Volume | 15 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 1998 |
ASJC Scopus Subject Areas
- Statistical and Nonlinear Physics
- Atomic and Molecular Physics, and Optics
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