@inproceedings{6b0778f2623241a6a4c65eb73b50a9b2,
title = "Tunable THz plasmon resonances in InGaAs/InP HEMT",
abstract = "Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 - 50 cm-1. The resonance frequency red-shifts with increasing negative gate bias as expected. Photo-response to a tunable far-IR laser is reported. The device may have application in high-frame-rate THz array detectors for spectral imaging with real-time chemical analysis.",
keywords = "Detector, HEMT, Plasmon, Terahertz, Two dimensional electron gas",
author = "Peale, \{R. E.\} and H. Saxena and Buchwald, \{W. R.\} and Dyer, \{G. C.\} and Allen, \{S. J.\}",
year = "2009",
doi = "10.1117/12.818520",
language = "English",
isbn = "9780819475770",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Terahertz Physics, Devices, and Systems III",
note = "Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense ; Conference date: 14-04-2009 Through 15-04-2009",
}