Tunable THz plasmon resonances in InGaAs/InP HEMT

R. E. Peale; H. Saxena; W. R. Buchwald; G. C. Dyer; S. J. Allen

doi:10.1117/12.818520

Tunable THz plasmon resonances in InGaAs/InP HEMT

R. E. Peale
, H. Saxena
, W. R. Buchwald
, G. C. Dyer
, S. J. Allen

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Terahertz Physics, Devices, and Systems III
Subtitle of host publication	Advanced Applications in Industry and Defense
DOIs	https://doi.org/10.1117/12.818520
State	Published - 2009
Event	Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense - Orlando, FL, United States Duration: Apr 14 2009 → Apr 15 2009

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7311
ISSN (Print)	0277-786X

Conference

Conference	Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense
Country/Territory	United States
City	Orlando, FL
Period	4/14/09 → 4/15/09

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Detector
HEMT
Plasmon
Terahertz
Two dimensional electron gas

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10.1117/12.818520

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Tunable THz plasmon resonances in InGaAs/InP HEMT. / Peale, R. E.; Saxena, H.; Buchwald, W. R. et al.
Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense. 2009. 73110I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7311).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Peale, RE, Saxena, H, Buchwald, WR, Dyer, GC & Allen, SJ 2009, Tunable THz plasmon resonances in InGaAs/InP HEMT. in Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense., 73110I, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7311, Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense, Orlando, FL, United States, 4/14/09. https://doi.org/10.1117/12.818520

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title = "Tunable THz plasmon resonances in InGaAs/InP HEMT",

keywords = "Detector, HEMT, Plasmon, Terahertz, Two dimensional electron gas",

author = "Peale, \{R. E.\} and H. Saxena and Buchwald, \{W. R.\} and Dyer, \{G. C.\} and Allen, \{S. J.\}",

year = "2009",

doi = "10.1117/12.818520",

language = "English",

isbn = "9780819475770",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Terahertz Physics, Devices, and Systems III",

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}

TY - GEN

T1 - Tunable THz plasmon resonances in InGaAs/InP HEMT

AU - Peale, R. E.

AU - Saxena, H.

AU - Buchwald, W. R.

AU - Dyer, G. C.

AU - Allen, S. J.

PY - 2009

Y1 - 2009

KW - Detector

KW - HEMT

KW - Plasmon

KW - Terahertz

KW - Two dimensional electron gas

UR - https://www.scopus.com/pages/publications/69649096397

UR - https://www.scopus.com/pages/publications/69649096397#tab=citedBy

U2 - 10.1117/12.818520

DO - 10.1117/12.818520

M3 - Conference contribution

AN - SCOPUS:69649096397

SN - 9780819475770

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Terahertz Physics, Devices, and Systems III

T2 - Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense

Y2 - 14 April 2009 through 15 April 2009

ER -

Tunable THz plasmon resonances in InGaAs/InP HEMT

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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