Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

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@article{3ae8b7acfbbb47ca9f5ccc1dbf999248,

title = "Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor",

author = "H. Saxena and Peale, \{R. E.\} and Buchwald, \{W. R.\}",

year = "2009",

doi = "10.1063/1.3129319",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

AU - Saxena, H.

AU - Peale, R. E.

AU - Buchwald, W. R.

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/67649560622

UR - https://www.scopus.com/pages/publications/67649560622#tab=citedBy

U2 - 10.1063/1.3129319

DO - 10.1063/1.3129319

M3 - Article

AN - SCOPUS:67649560622

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 113101

ER -